arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1802.00717physics.plasm-ph
收藏

部分电离杂质和辐射对逃逸产生有效临界电场的影响

Effect of partially ionized impurities and radiation on the effective critical electric field for runaway generation

Linnea Hesslow, Ola Embréus, George J Wilkie, Gergely Papp, Tünde Fülöp

摘要:

我们推导出一个公式的有效临界电场失控的产生和衰变,占部分电离杂质的存在下,结合同步辐射和韧致辐射损失。结果表明,有效临界场比经典的Connor-Hastie场大得多,甚至超过了用总电子密度(包括自由电子和束缚电子)代替自由电子密度所得到的值.使用动力学方程求解器与感应电场,我们表明,失控电流衰减后,杂质注入预计是线性的时间和比例的有效临界电场在高电感托卡马克装置。这与逃逸电子的缓解策略的功效相关,因为它减少了实现一定电流衰减速率所需的注入杂质的量。

英文摘要:

We derive a formula for the effective critical electric field for runaway generation and decay that accounts for the presence of partially ionized impurities in combination with synchrotron and bremsstrahlung radiation losses. We show that the effective critical field is drastically larger than the classical Connor-Hastie field, and even exceeds the value obtained by replacing the free electron density by the total electron density (including both free and bound electrons). Using a kinetic equation solver with an inductive electric field, we show that the runaway current decay after an impurity injection is expected to be linear in time and proportional to the effective critical electric field in highly inductive tokamak devices. This is relevant for the efficacy of mitigation strategies for runaway electrons since it reduces the required amount of injected impurities to achieve a certain current decay rate.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑