用单重态fission增强硅太阳能电池：使用量子点中间体的Foerster共振能量转移的情况
Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate
摘要：
太阳能电池效率克服Shockley-Queisser极限的一种方法是使用多并苯如并四苯（Tc）中的单线态裂变（SF）对高能光子进行下转换。SF使得能够从可以与Si组合收获的高能光子产生多个激子。在这项工作中，我们研究了使用的硫化铅量子点（PbS量子点）的带隙接近Si作为夹层，允许Foerster共振能量转移（FRET）从Tc到Si，一个过程，将自旋禁止没有中间QD步骤。我们研究如何传统的FRET模型，最常用的分子相互作用的描述，可以修改来描述的几何形状的量子点之间的Tc和Si和如何量子点和Si之间的距离，量子点的带隙影响的FRET效率。通过将FRET模型中的受体偶极扩展到2D平面和体积，我们看到转移的距离依赖性的弛豫。我们的研究结果表明，从PbS量子点到Si的FRET效率远高于50%是可能的，在非常短的，但可能现实的距离约为1 nm，即使量子点具有相对较低的光致发光量子产率。
英文摘要：
One way for solar cell efficiencies to overcome the Shockley-Queisser limit is downconversion of high-energy photons using singlet fission (SF) in polyacenes like tetracene (Tc). SF enables generation of multiple excitons from the high-energy photons which can be harvested in combination with Si. In this work we investigate the use of lead sulfide quantum dots (PbS QDs) with a band gap close to Si as an interlayer that allows Foerster Resonant Energy Transfer (FRET) from Tc to Si, a process that would be spin-forbidden without the intermediate QD step. We investigate how the conventional FRET model, most commonly applied to the description of molecular interactions, can be modified to describe the geometry of QDs between Tc and Si and how the distance between QD and Si, and the QD bandgap affects the FRET efficiency. By extending the acceptor dipole in the FRET model to a 2D plane, and to the bulk, we see a relaxation of the distance dependence of transfer. Our results indicate that FRET efficiencies from PbS QDs to Si well above 50 % are be possible at very short, but possibly realistic distances of around 1 nm, even for quantum dots with relatively low photoluminescence quantum yield.
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