基于HgTe -- CdHgTe量子阱异质结的带间红外探测器
Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure
摘要：
计算了HgTe-CdHgTe量子阱红外探测器的带间特性。由于电子被量子阱俘获的几率很小，所以带间HgTe-CdHgTe量子阱具有很高的光电导增益。我们的分析表明，这些设备相比，传统的CdHgTe光电探测器和A $_3$ B $_5$异质结构的显着的潜在优势。
英文摘要：
We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostructures.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
