非掺杂Bi $_{12}$ TiO $_{20}$硅单晶中近红外光折变全息记录
Near-infrared holographic photorefractive recording under applied electric field in undoped Bi$_{12}$TiO$_{20}$ sillenite crystal
摘要：
研究了1064 nm波段非掺杂Bi $_{12}$ TiO $_{20}$晶体在外加直流电场作用下的衍射效率（$E_0$）。当$E_0$从0.0 kV/cm增加到4.2 kV/cm时，衍射效率提高了12倍。使用光致发光活性的标准模型研究了衍射效率对$E_0$的理论依赖性，结果显示出良好的实验数据拟合，允许计算有效陷阱浓度$(N_D$ $)_{eff}$ $\approx$ $5.3\times 10^{15}$ cm $^{-3}$，其由记录机制负责到BTO晶体样品中。在近红外区域的记录机制中所涉及的电荷载体的类型进行了讨论。
英文摘要：
Direct holographic recording in undoped Bi$_{12}$TiO$_{20}$ crystal at 1064 nm is investigated aiming the characterization of diffraction efficiency under action of applied dc electric field ($E_0$). An enhancement of 12-fold in the diffraction efficiency was revealed when $E_0$ increased from 0.0 to 4.2 kV/cm. The theoretical dependence of the diffraction efficiency upon $E_0$ was investigated using the standard model for photorefractivity and the results showed a good experimental data fitting, allowing the computation of the effective trap concentration $(N_D$$)_{eff}$ $\approx$ $5.3\times 10^{15}$ cm$^{-3}$ which is responsible by the recording mechanism into the BTO crystal sample. The type of charge carrier involved in the recording mechanism in the nearinfrared region is also discussed.
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