射频偏置约瑟夫森磁通二极管的混沌态
Chaotic states of rf biased Josephson fluxonic diode
摘要：
本文报道了在RCSJ模型下，在磁场、射频驱动和直流偏置电流作用下约瑟夫森磁通二极管（JFD）混沌的模拟结果。这种非线性器件的动态行为被映射为损耗，偏置，频率和射频激励的幅度的函数，从而找到可持续的磁通振荡区域在微波应用中。结果表明，当直流偏压或射频激励低于特定值时，混沌不会发生，但损耗项可以改变这种状态而不受射频频率的影响。试图解释的参数映射的混沌区域的边界。
英文摘要：
The results of chaos simulations in Josephson Fluxonic Diode (JFD) subject to the magnetic field, rf driving and dc biasing currents in the RCSJ model are reported. The dynamic behavior of this nonlinear device is mapped as a function of loss, bias, frequency and amplitude of rf excitation which leads to find sustainable fluxon oscillation regions in microwave application. As a result, chaos does not happen if either the dc bias or the rf excitation is below specific value, but the loss term can change this state without affected by rf frequency. An attempt is made to explain the boundaries of the chaotic region in terms of parameter maps.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
