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arXiv 1709.08313cond-mat.mes-hall
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插层铁磁体Cr1/3TaS2的剥离和范德华异质结构组装

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

Yuji Yamasaki, Rai Moriya, Miho Arai, Satoru Masubuchi, Sunseng Pyon, Tsuyoshi Tamegai, Keiji Ueno, Tomoki Machida

摘要:

铁磁范德华(vdW)材料是用于具有全二维材料异质结构的自旋电子器件的需求。在这里,我们证明了机械剥离的磁性原子嵌入过渡金属二硫属化物Cr 1/3 TaS 2从其散装晶体,以前这样的插层材料被认为是难以剥离。剥离的纳米厚的薄片的磁输运揭示了低于其居里温度TC ~ 110 K的铁磁有序性以及强的面内磁各向异性;这些与其本体性质相同。此外,范德瓦尔斯异质结构组装的Cr 1/3 TaS 2与另一个插入铁磁体Fe 1/4 TaS 2证明使用干转移方法。制造的异质结组成的Cr 1/3 TaS 2和Fe 1/4 TaS 2与天然Ta 2 O 5氧化物隧道势垒之间的隧道磁阻(TMR),揭示可能的自旋注入和检测这些剥离铁磁材料通过VDW结。

英文摘要:

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature TC ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

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