用于超低功率自旋-轨道-转矩开关的具有巨自旋霍尔效应的导电拓扑绝缘体
A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching
摘要：
利用重金属和拓扑绝缘体中的自旋霍尔效应（SHE）实现自旋-轨道-转矩（SOT）开关在超低功耗磁阻随机存取存储器（MRAM）中具有巨大的潜力。为了与传统的自旋转移矩（STT）开关竞争，需要具有大自旋霍尔角（$θ_{SH}$ > 1）和高电导率（$σ > 10^5 Ω^{-1}m^{-1}$）的纯自旋电流源。在这里，我们展示了这样一个纯自旋电流源：BiSb薄膜与$σ{\sim}2.5*10^5 Ω^{-1}m^{-1}$，$θ_{SH}{\sim}52$，和自旋霍尔电导率$σ_{SH}{\sim}1.3*10^7 {\hbar}/2eΩ^{-1}m^{-1}$在室温下。我们表明，BiSb薄膜可以在Bi $_{0.9}$中产生2770 Oe/（MA/cm $^2$）的巨大自旋轨道场和低至1.5 MA/cm $^2$的临界开关电流密度。Sb $_{0.1}$ / MnGa双层。BiSb是拓扑绝缘体首次工业应用的最佳候选材料。
英文摘要：
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional spin-transfer-torque (STT) switching, a pure spin current source with large spin Hall angle ($θ_{SH}$ > 1) and high electrical conductivity ($σ > 10^5 Ω^{-1}m^{-1}$) is required. Here, we demonstrate such a pure spin current source: BiSb thin films with $σ{\sim}2.5*10^5 Ω^{-1}m^{-1}$, $θ_{SH}{\sim}52$, and spin Hall conductivity $σ_{SH}{\sim}1.3*10^7 {\hbar}/2eΩ^{-1}m^{-1}$ at room temperature. We show that BiSb thin films can generate a colossal spin-orbit field of 2770 Oe/(MA/cm$^2$) and a critical switching current density as low as 1.5 MA/cm$^2$ in Bi$_{0.9}$Sb$_{0.1}$ / MnGa bi-layers. BiSb is the best candidate for the first industrial application of topological insulators.
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