用于高密度可拉伸电子器件的超可拉伸互连
Ultra-Stretchable Interconnects for High-Density Stretchable Electronics
摘要：
令人兴奋的可拉伸电子器件（SE）领域有望实现许多新的应用，特别是体内和医疗诊断设备。然而，未来先进的SE微型器件将需要高密度、极可拉伸的互连和微米级的基底面，这需要使用体集成电路（IC）微细加工工具和细间距光刻图案化的经过验证的标准化（互补金属氧化物半导体（CMOS）型）工艺配方。在这里，我们通过引入支持CMOS的、独立的、小型化的互连结构来解决高密度SE器件的微细加工与极端拉伸性的组合挑战，这些互连结构通过屈曲、扭转和弯曲的相互作用来充分利用其3D运动自由度，以最大限度地提高拉伸性。通过利用柔性到刚性（F2 R）后处理技术确保与标准CMOS类型批处理的集成，使后端互连结构独立，从而实现高度可伸展互连的常规微制造。这些独立式结构的性能和再现性是有希望的：弹性拉伸超过2000%，极限（塑性）拉伸超过3000%，电阻变化<0.3%，并且在1000%拉伸下> 1000万次循环，电阻变化<1%。这种通用技术为令人兴奋的高度可拉伸微型设备提供了一条新途径。
英文摘要：
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.
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