基于位置可控纳米间隙系统的超低功耗纳机电存储器
Ultra-low Power Nanoelectromechanical Memory Based on Location-controllable Nanogap System
摘要：
低维纳米材料的纳米间隙工程在从分子电子学到存储器的各个领域都引起了相当大的兴趣。在特定位置产生纳米间隙对于器件的可重复制造至关重要。在这项工作中，我们报告了一个合理的设计的非易失性存储器的基础上亚5纳米纳米间隙单壁碳纳米管（SWNTs）通过机电运动。在具有纳米尺度区域的部分悬浮的单壁碳纳米管器件中，通过电烧容易地实现纳米间隙。单壁碳纳米管存储器装置适用于金属和半导体单壁碳纳米管，解决了半导体单壁碳纳米管与金属单壁碳纳米管分离的挑战。同时，该存储器件具有极低的写入能量（4.1*10-19 J/bit）、105的开/关比、稳定的导通操作以及在环境条件下超过30小时的保持时间等优异性能，具有很大的应用潜力。
英文摘要：
Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. In this work, we report a rational design of non-volatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion. The nanogaps are readily realized by electroburning in a partially suspended SWNTs device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultra-low writing energy (4.1*10-19 J per bit), ON/OFF ratio of 105, stable switching ON operations and over 30 hours retention time in ambient conditions, which are of great potential for applications.
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