可见光谱范围内GaN单光子源的光物理
Photophysics of GaN single photon sources in the visible spectral range
摘要：
在这项工作中，我们提出了一个详细的光物理分析最近发现的光学稳定，单光子发射器（SPE）的氮化镓（GaN）。温度分辨的光致发光测量结果表明，在4 K的发射线是三个数量级宽比变换限制的宽度预期从激发态寿命测量。展宽归因于超快光谱扩散。在室温（RT）下继续对几种发射体的光物理研究，测量到~427 kCounts/s的最大平均亮度。此外，通过确定发射器的衰减率进行三能级光学跃迁，辐射和非辐射寿命计算在RT。最后，从14个发射器的偏振测量用于确定可见度以及偶极子取向的缺陷系统内的GAN晶体。我们的研究结果支持了在低温和RT下GAN中SPE的一些基本特性，并为GaN基单光子技术的未来工作定义了基准。
英文摘要：
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.
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