高温制备数十微米级CH3NH3PbI3薄膜
Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature
摘要：
制备高质量的有机-无机混合卤化物钙钛矿层是在其相关太阳能电池中实现高效光子能量收集和电能转换的关键前提。在这篇文章中，我们报告了一种新的基于高温化学气相反应的CH 3 NH3 PbI 3层的制备技术。用脉冲激光沉积法制备了PbI_2薄膜，然后在160 ~ 210 ℃的温度范围内与CH_3NH_3I蒸气反应，制备了CH_3NH_3PbI_3薄膜。X射线衍射图谱证实了纯相的形成，光致发光光谱在760 nm附近显示出强峰。扫描电子显微镜图像证实了平均晶粒尺寸从160 oC的低反应温度下的近1 μm显著增加到200 oC的高反应温度下的超过10 μm。制备了电池，获得了15.75mA/cm ~ 2的短路电流密度、0.49V的开路电压和71.66%的填充因子。
英文摘要：
The fabrication of high-quality organic-inorganic hybrid halide perovskite layers is the key prerequisite for the realization of high efficient photon energy harvest and electric energy conversion in their related solar cells. In this article, we report a novel fabrication technique of CH3NH3PbI3 layer based on high temperature chemical vapor reaction. CH3NH3PbI3 layers have been prepared by the reaction of PbI2 films which were deposited by pulsed laser deposition, with CH3NH3I vapor at various temperatures from 160 oC to 210 oC. X-ray diffraction patterns confirm the formation of pure phase, and photoluminescence spectra show the strong peak at around 760 nm. Scanning electron microscopy images confirm the significantly increased average grain size from nearly 1 μm at low reaction temperature of 160 oC to more than 10 μm at high reaction temperature of 200 oC. The solar cells were fabricated, and short-circuit current density of 15.75 mA/cm2, open-circuit voltage of 0.49 V and fill factor of 71.66% have been obtained.
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