离子辐照单层二维材料中的缺陷尺寸、分离和衬底效应
Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials
摘要：
在当代材料科学中，二维纳米材料的精确和可扩展的缺陷工程是非常受欢迎的。在这里，我们提出了缺陷工程单层石墨烯和二硫化钼（MoS $_2$）的照射与惰性气体离子在30千电子伏。在气体场离子源显微镜中使用两种不同质量的离子种类：氦（He $^+$）和氖（Ne $^+$）。使用拉曼光谱进行了详细的研究，所引入的缺陷尺寸和所产生的缺陷间的距离与逐步上升的离子剂量。扩展现有的模型，我们发现，平均缺陷尺寸是相当小的支持比独立的石墨烯和缺陷的生产率更大。我们的结论是，从基板的二次原子在缺陷产生中发挥了重要作用，相对于由初级离子束所产生的缺陷，产生更小的缺陷。此外，一个类似的模型也适用于支持的MoS $_2$，另一个有前途的成员的二维材料家族。两种离子的缺陷产率获得的MoS $_2$，证明它们与材料的不同的相互作用，并促进与文献中的其他照射条件的比较。
英文摘要：
Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He$^+$) and neon (Ne$^+$). A detailed study of the introduced defect sizes and resulting inter-defect distance with escalating ion dose was performed using Raman spectroscopy. Expanding on existing models, we found that the average defect size is considerably smaller for supported than freestanding graphene and that the rate of defect production is larger. We conclude that secondary atoms from the substrate play a significant role in defect production, creating smaller defects relative to those created by the primary ion beam. Furthermore, a similar model was also applied to supported MoS$_2$, another promising member of the 2D material family. Defect yields for both ions were obtained for MoS$_2$, demonstrating their different interaction with the material and facilitating comparison with other irradiation conditions in the literature.
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