作为电荷积分像素阵列探测器的X射线传感器材料的铬补偿的GaAs的表征
Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors
摘要：
我们研究了铬补偿GaAs耦合到电荷积分ASIC时的性能作为探测器温度、外加偏压和X射线管能量的函数。该材料是光敏电阻器，并且可以被偏置以通过像素电路收集电子或空穴。两者都在这里研究。先前的研究已经显示出大量的空穴捕获。这种陷波和其它传感器特性引起几种非理想效应，包括扩展的点扩散函数、有效像素尺寸的变化和速率相关偏移移位。这些效应的大小随温度和偏置而变化，要求传感器具有良好的温度均匀性和非常好的温度稳定性，以及精心选择的偏置电压。
英文摘要：
We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.
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