侧壁间隔物钝化亚微米约瑟夫森结制造工艺
Side-wall spacer passivated sub-um Josephson junction fabrication process
摘要：
我们提出了一种结构和超导隧道结的制造方法，尺寸下降到200 nm，使用i线紫外光刻。关键元件是侧壁钝化间隔结构（SWAPS），其形状为平滑的交叉线接触和低寄生电容。SWAPS结构使得能够形成具有处于或低于光刻限制线宽的尺寸的结。另一个好处是避免了非晶介电材料的过度使用，这在亚开尔文微波应用中是有利的，通常受到非线性和有损耗介电常数的困扰。我们将该结构应用于铌三层结，并提供表征结果产生的证据晶圆级的可扩展性，和临界电流密度调谐范围为0.1 - 3.0 kA/cm $^2$。我们讨论的结过程中的不同应用的背景下，如SQUID磁强计和约瑟夫森参量放大器的适用性。
英文摘要：
We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1 -- 3.0 kA/cm$^2$. We discuss the applicability of the junction process in the context of different applications, such as, SQUID magnetometers and Josephson parametric amplifiers.
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