栅压下热循环对graphene-on-SiO $_2$界面水诱导载流子密度的可逆控制
Reversible control of interface-water induced carrier density in graphene-on-SiO$_2$ by thermal cycling under gate-voltage
摘要：
除了栅极电场之外，石墨烯载流子密度的可逆处理对于石墨烯的存储器应用是期望的。我们的实验表明，在SiO $_2$上的石墨烯中由于界面水/氧而通常观察到的载流子密度滞后在低于250 K的温度下消失。这些物质的状态，这会影响石墨烯载流子密度，在低温下可以通过在不同的栅极电压下热循环到室温来可逆地控制。此外，用相对干燥的界面制备的器件，因此在室温下显示出可忽略的滞后，在高于室温的加热下显示出滞后的显著增加。因此，在高温和栅电压下的热循环提供了对载流子密度的可逆处理。这些结果进行了讨论的氧化还原反应动力学的温度和界面水密度的依赖性。
英文摘要：
A reversible handle on graphene carrier density, other than the gate electric field, is desirable for memory applications of graphene. Our experiments show that the commonly observed carrier density hysteresis in graphene on SiO$_2$ due to interface water/oxygen vanishes at temperatures below 250 K. The state of these species, which affects the graphene carrier density, at low temperatures can be reversibly controlled by thermal cycling to room temperature at different gate voltages. Further, devices prepared with relatively dry interface, and thus showing negligible hysteresis at room temperature, show a marked increase in hysteresis on heating above room temperature. Thus thermal-cycling, to high temperatures and under gate-voltage, provides a reversible handle on carrier density. These results are discussed in terms of temperature and interface-water density dependence of redox-reaction kinetics.
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