Ir（111）表面单层六方氮化硼岛的微观分析
Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)
摘要：
采用化学气相沉积（CVD）方法在Ir（111）衬底上生长了高结晶质量的六方氮化硼（hBN）单层岛，并利用低能电子显微镜（LEEM）对其进行了研究。已经观察到两种类型的hBN岛，其相对于铱的形状和取向在结构上不同，其中前者在很大程度上取决于铱台阶形态。光电子发射电子显微镜（PEEM）和IV-LEEM光谱显示，这两种岛型也表现出不同的功函数和结合铱，这提供了一个解释，其形状和生长模式的差异。此外，各种温度用于hBN的CVD合成，并且发现在高于约950 °C的温度下，源自分解的环硼氮烷分子或分解的hBN岛的硼原子可以形成另外的紧凑的重构区域。所呈现的结果对于高质量hBN和其他硼基层状材料的合成的进步是重要的，因此可以加速其技术实现。
英文摘要：
Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 °C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation.
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