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arXiv 1703.04651physics.ins-det
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多像素光子计数器中的延迟雪崩

Delayed avalanches in Multi-Pixel Photon Counters

Kyle Boone, Yuji Iwai, Fabrice Retiere, Carl Rethmeier

摘要:

Hamamatsu Photonics于2013年推出了新一代多像素光子计数器,大大降低了后脉冲率。在本文中,我们通过使用405至820 nm的激光测试2013年之前和2013年之后的设备来调查后脉冲的原因。这样做,我们调查的可能性,afterpulsing也是由于雪崩中产生的光子,而不是杂质捕获雪崩中产生的带电载流子,并在稍后的时间释放它们。对于2013年以前的器件,我们观察到在637、777 nm和820 nm处延迟ns至几百ns的雪崩,这表明在硅体的零场区域中产生的空穴可以扩散回到高场区域,从而触发延迟雪崩。另一方面,2013年后在777nm处没有表现出超过100 ns的延迟雪崩。我们还证实,2013年后的设备表现出约25倍的低后脉冲。总而言之,我们的测量结果表明,硅块中雪崩产生的光子吸收以及随后的空穴扩散回到结是2013年之前器件的后脉冲的重要来源。在我们的初步结果发布后,滨松似乎在2013年解决了这个问题。我们还表明,即使在短波长的时序分布表现出尾巴在亚纳秒范围内,可能会损害MPPC的定时性能。

英文摘要:

Hamamatsu Photonics introduced a new generation of their Multi-Pixel Photon Counters in 2013 with significantly reduced after-pulsing rate. In this paper, we investigate the causes of after-pulsing by testing pre-2013 and post-2013 devices using laser light ranging from 405 to 820nm. Doing so we investigate the possibility that afterpulsing is also due to optical photons produced in the avalanche rather than to impurities trapping charged carriers produced in the avalanches and releasing them at a later time. For pre-2013 devices, we observe avalanches delayed by ns to several 100~ns at 637, 777nm and 820 nm demonstrating that holes created in the zero field region of the silicon bulk can diffuse back to the high field region triggering delayed avalanches. On the other hand post-2013 exhibit no delayed avalanches beyond 100~ns at 777nm. We also confirm that post-2013 devices exhibit about 25 times lower after-pulsing. Taken together, our measurements show that the absorption of photons from the avalanche in the bulk of the silicon and the subsequent hole diffusion back to the junction was a significant source of after-pulse for the pre-2013 devices. Hamamatsu appears to have fixed this problem in 2013 following the preliminary release of our results. We also show that even at short wavelength the timing distribution exhibit tails in the sub-nanosecond range that may impair the MPPC timing performances.

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