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arXiv 1702.04791cond-mat.mtrl-sci

Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures

Radhe Agarwal, Yogesh Sharma, Siliang Chang, Krishna Pitike, Changhee Sohn, Serge M. Nakhmanson, Christos G. Takoudis, Ho Nyung Lee, James F. Scott, Ram S. Katiyar, Seungbum Hong

英文摘要:

We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications.

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