用于片上光子学的非晶硅掺杂二氧化钛薄膜
Amorphous silicon-doped titania films for on-chip photonics
摘要：
高质量的光学薄膜材料形成了片上光子微器件和纳米器件的基础，其中几个光子元件形成了光路。它们的实现通常需要薄膜具有比基底材料更高的折射率。在这里，我们展示了一种在各种衬底上沉积非晶25%Si掺杂TiO 2薄膜的方法，一种将这些薄膜成形为光子元件（如光波导和谐振器）的方法，最后，这些元件的性能。通过测量薄膜腔Q因子在790 nm波长处超过10^5来估计膜的质量，对应于5.1 db/cm的低传播损耗。所制造的光子结构被用于通过倏逝波耦合来光学寻址嵌入在衬底中的铬离子，因此使其能够通过膜-衬底相互作用。还证明了通过掺杂光学活性稀土离子如铒的膜的额外功能化。因此，Si：TiO 2膜允许创建高质量的光子元件，包括无源和有源，并且还提供了对嵌入其中的各种衬底和发射器的访问。
英文摘要：
High quality optical thin film materials form a basis for on-chip photonic micro- and nano-devices, where several photonic elements form an optical circuit. Their realization generally requires the thin film to have a higher refractive index than the substrate material. Here, we demonstrate a method of depositing amorphous 25% Si doped TiO2 films on various substrates, a way of shaping these films into photonic elements, such as optical waveguides and resonators, and finally, the performance of these elements. The quality of the film is estimated by measuring thin film cavity Q-factors in excess of 10^5 at a wavelength of 790 nm, corresponding to low propagation losses of 5.1 db/cm. The fabricated photonic structures were used to optically address chromium ions embedded in the substrate by evanescent coupling, therefore enabling it through film-substrate interaction. Additional functionalization of the films by doping with optically active rare-earth ions such as erbium is also demonstrated. Thus, Si:TiO2 films allow for creation of high quality photonic elements, both passive and active and also provide access to a broad range of substrates and emitters embedded therein.
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