单极阻变忆阻器复位跃迁的半经验模型
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors
摘要：
我们已经测量了从高电阻率状态到低电阻率状态的转变过程，即，研究了基于Ni/HfO 2/Si-n+结构的阻变忆阻器的复位过程，建立了其电学特性的解析模型。当在电流-电压（I-V）域中绘制特性曲线时，观察到高可变性。尽管如此，当在电荷-通量域（Q-f）中绘制相同的曲线时，它们可以通过仅包含三个参数的简单模型来描述：复位点处的电荷（Qrst）和通量（frst），以及与复位转变之前的电荷和通量相关的指数n。这三个参数可以很容易地从Q-f图中提取出来。这三个参数之间有很强的相关性，其起源仍在研究中。
英文摘要：
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their electrical characteristics. When the characteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite of that, when the same curves are plotted in the charge-flux domain (Q-f), they can be described by a simple model containing only three parameters: the charge (Qrst) and the flux (frst) at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parameters can be easily extracted from the Q-f plots. There is a strong correlation between these three parameters, the origin of which is still under study.
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