新一代溴百里酚蓝光电二极管的电学和光电特性研究
Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye
摘要：
采用旋涂法在p-Si衬底上制备了分子式为C27 H28 Br 2 O 5S的溴百里酚蓝（BTB）异质结。在室温下，在黑暗和不同光照强度下，对二极管的电流-电压（I-V）进行了测量。利用随光照强度变化的I-V数据研究了BTB异质结的光电特性。结果表明，二极管的光电流随光强的增加而增加。通过不同频率下的I-V、电容-电压（C-V）、电导-电压（G-V）测量，确定了器件的电学参数。据观察，在低频下，由于界面态电荷的贡献，可以遵循交流电流信号的电容创建的过剩电容。指出有机薄膜中间层不仅可以改变二极管的光电参数，而且可以影响器件的性能。
英文摘要：
Bromothymol blue (BTB) with the molecular formula of C27H28Br2O5S was grown onto p-Si substrate to fabricate heterojunction by spin coating technique. The current voltage (I-V) measurements of diode were carried out in dark and under different illumination intensity at room temperature. The photoelectrical properties of heterojunction based on BTB were investigated using the illumination intensity dependent I-V data. The results showed that photo current of diode increases with the increase in light intensity. Also, the electrical parameters of device were determined via I-V, and capacitance- voltage (C-V), conductance-voltage (G-V) measurements at different frequencies. It is observed that the excess capacitance is created at low frequencies due to the contribution of interface states charge which can follow the alternative current signal to capacitance. It is stated that, both the electrical photoelectrical parameters of diode can be changed, and also the performance of the device could be affected by the organic thin film interlayer.
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