室温冷均匀化法制备纳米晶Cu-Sn双层膜中Cu6Sn5相
Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu-Sn bilayers at room temperature
摘要：
采用二次中性质谱深度剖析法和X射线衍射法研究了纳米晶Cu和Sn薄膜在室温下的固相反应。观察到快速扩散混合导致形成均匀的Cu 6Sn 5层。没有Cu 3Sn相出现的迹象。这提供了一种在低温下进行固相焊接的方法，即在合理的时间（大约几小时或更少）内产生几十纳米的均匀Cu 6Sn 5中间层。通过对Sn（100 nm）/Cu（50 nm）体系中初始界面处形成的平面反应层生长的详细分析，得出了室温下的抛物线生长速率系数为2.3 × 10 ~（-15）cm ~ 2/s。此外，Cu膜内部靠近衬底处的成分总体增加是由晶界扩散引起的固态反应解释的：新相沿晶界形成并垂直于晶界面生长。根据组成对时间函数的初始斜率，该反应期间的界面速度估计为约0.5nm/h。
英文摘要：
Solid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6Sn5 layer. There is no indication of the appearance of the Cu3Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu6Sn5 intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 x 10-15 cm2/s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.
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