Ti/manganite/Si $O_x$ /Si异质结中多态阻变的起源
Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures
摘要：
我们报道了Ti/ $La_{1/3}$ $Ca_{2/3}$ Mn $O_3$ /Si $O_x$ /n-Si忆阻器件的生长和表征。我们证明，使用电流作为电刺激揭示了一个中间电阻状态，除了通常的高和低电阻状态，在标准的电压控制实验中观察到的。基于彻底的电气特性（阻抗谱，电流-电压曲线分析），我们公开了三个不同的微观区域的设备的传输特性的贡献：欧姆不完整的金属丝，薄的锰氧化物层下面的细丝尖端表现出普尔-弗伦克尔像导电，和SiOx层的电响应以及其特征在于由一个儿童朗缪尔定律。我们的研究结果表明，SiOx层的存在起着关键的作用，在稳定的中间电阻水平，表明两个或更多个活性RS氧化物的组合增加了功能，相对于单氧化物设备。我们知道，这些多层次的设备是有趣的和有前途的，因为它们的制造过程是相当简单的，他们是完全兼容的标准硅基电子。
英文摘要：
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active RS oxides adds functionalities in relation to single-oxide devices. We understand that these multilevel devices are interesting and promising as their fabrication procedure is rather simple and they are fully compatible with standard Si-based electronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
