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arXiv 1610.02450cond-mat.mtrl-scicond-mat.str-el
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Fe3O4薄膜:控制和操纵难以捉摸的量子材料

Fe3O4 thin films: controlling and manipulating an elusive quantum material

X. H. Liu, C. F. Chang, A. D. Rata, A. C. Komarek, L. H. Tjeng

摘要:

Fe 3 O 4(磁铁矿)是最难以捉摸的量子材料之一,同时也是研究最多的用于薄膜应用的过渡金属氧化物材料之一。理论上预期的半金属行为产生了很高的期望,它可以用于自旋电子器件。然而,尽管大量的工作致力于制备薄膜,神秘的第一级金属-绝缘体转变和称为Verwey转变的磁铁矿的霍尔标记在薄膜中非常宽,并且与高质量块状单晶相比,在显著较低的温度下发生。在这里,我们已经成功地找到并制作了一种特殊的基板,使磁铁矿薄膜的生长与Verwey过渡一样尖锐的散装。此外,我们现在能够调整转变温度,并使用拉伸应变,将其增加到比本体更高的值。

英文摘要:

Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin film applications. The theoretically expected half-metallic behavior generates high expectations that it can be used in spintronic devices. Yet, despite the tremendous amount of work devoted to preparing thin films, the enigmatic first order metal-insulator transition and the hall mark of magnetite known as the Verwey transition, is in thin films extremely broad and occurs at substantially lower temperatures as compared to that in high quality bulk single crystals. Here we have succeeded in finding and making a particular class of substrates that allows the growth of magnetite thin films with the Verwey transition as sharp as in the bulk. Moreover, we are now able to tune the transition temperature and, using tensile strain, increase it to substantially higher values than in the bulk.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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