GaAs上的AlN-buffered超导NbN纳米线单光子探测器
AlN-buffered superconducting NbN nanowire single-photon detector on GaAs
摘要：
研究了AlN作为GaAs衬底上NbN超导纳米线单光子探测器缓冲层的适用性。在带有AlN缓冲层的GaAs衬底上沉积的厚度为3.3 nm ~ 20 nm的NbN薄膜，与裸衬底上沉积的NbN薄膜相比，具有更高的临界温度、临界电流密度和更低的剩余电阻率。不幸的是，NbN膜到衬底的热耦合减弱。在缓冲衬底上由4.9nm厚的NbN膜制成的SNSPD（与由裸GaAs上的NbN膜制成的检测器相比）在900 nm下在90%的临界电流下测量时显示出低三个数量级的暗计数率和高约十倍的检测效率。缓冲衬底上SNSPD的系统定时抖动为72 ps，比裸衬底上的SNSPD的系统定时抖动低36 ps。然而，NbN纳米线到缓冲衬底的较弱的热耦合导致在偏置电流> 0.97IC时的闩锁效应。
英文摘要：
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer, demonstrate a higher critical temperature, critical current density and lower residual resistivity in comparison to films deposited onto bare substrates. Unfortunately, the thermal coupling of the NbN film to the substrate weakens. SNSPDs made of 4.9 nm thick NbN films on buffered substrates (in comparison to detectors made from NbN films on bare GaAs) demonstrate three orders of magnitude lower dark count rates and about ten times higher detection efficiency at 900 nm being measured at 90% of the critical current. The system timing jitter of SNSPDs on buffered substrates is 72 ps which is 36 ps lower than those on bare substrate. However, a weaker thermal coupling of NbN nanowire to the buffered substrate leads to a latching effect at bias currents > 0.97 IC.
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