电介质和半导体的SERS理论
The Theory of SERS on Dielectrics and Semiconductors
摘要：
结果表明，介质和半导体基底上的表面增强拉曼散射是由于表面粗糙度半径很小或曲率很大的顶部区域的电场增强所致。增强依赖于衬底的介电常数，并且对于较大的介电常数更强。结果表明，在相同的介电常数模量下，半导体材料的增强作用比金属材料的增强作用弱。得到的结果证实了各种半导体和电介质基板上获得的增强系数的实验数据。
英文摘要：
It is demonstrated that the reason of SERS on dielectric and semiconductor substrates is the enhancement of the electric field in the regions of the tops of the surface roughness with very small radius, or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.
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