少层p-WSe2光电晶体管光电导特性的多端测量
Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements
摘要：
近年来，二维材料，特别是过渡金属二硫属化物（TMD），由于其强大的光-物质相互作用和显着的场效应晶体管（FET）的光电响应被广泛研究。在这里，我们报告的光电导研究FET建立从几层的p-WSe 2测量在一个多终端配置下，由532 nm的激光光源的照明。光生电流作为入射光功率、漏源偏置和栅电压的函数进行测量。我们观察到一个相当大的光电导时，光电晶体管测量时，通过一个四端配置相比，两个终端之一。当入射激光功率为248 nW时，当偏置电压Vds = 1 V，栅压Vbg = 10 V时，样品的双端响应率（R）和伴随的外量子效率（EQE）分别为18 A/W和~4000%。当使用四端配置时，观察到R和EQE分别增加370%至~85 A/W和~20000%。因此，我们的结论是，以前的报告严重低估了过渡金属二硫属化物的光电响应，这实际上揭示了一个显着的潜力，光敏应用。
英文摘要：
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.
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