The evolution of the magnetic and charge transport properties of itinerant magnetic metal MnSi with the substitution of Al and Ga on the Si site is investigated. We observe an increase in unit cell volume indicating that both Al and Ga substitutions create negative chemical pressure. There are substantial increases in the Curie temperature and the ordered moment demonstrating that the substitutions give the magnetism a more local character. The substitutions also increase the range of temperature and field where the skyrmion phase is stable due to a change in the character of the magnetism. In contrast to the behavior of pure MnSi and expectations for the intrinsic anomalous Hall effect, we find a significant temperature dependence to the magnitude and sign of anomalous Hall conductivity constant in Al or Ga substituted samples. This temperature dependence likely reflects changes in the spin-orbit coupling strength with temperature, which may have significant consequences on the helical and skyrmion states. Overall, we observe a continuous evolution of magnetic and charge transport properties through positive to negative pressure
State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies
Pressure-tuning of electronic structure of CeTe3 probed by femtosecond collective mode spectroscopy
Institute of Physics, Johannes Gutenberg-University（约翰内斯·古腾堡大学物理研究所）；Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院量子材料与技术研究所）；Department of Physics, University of Konstanz（康斯坦茨大学物理系）；Department of Applied Physics, Stanford University（斯坦福大学应用物理系）；Department of Physics, Universidad de Los Andes（安第斯大学物理系）；Geballe Laboratory for Advanced Materials, Stanford University（斯坦福大学加巴勒先进材料实验室）；Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）
Correlation-driven tunability of altermagnetism in RuO$_2$
Center for Computational Quantum Physics (CCQ), Flatiron Institute（计算量子物理中心（CCQ），平顿研究所）；Institute of Solid State Physics, TU Wien（固体的物理学研究所，维也纳工业大学）；Theoretical Division, Los Alamos National Laboratory（理论部，洛斯阿拉莫斯国家实验室）；POSCO Holdings（POSCO控股）；Institute for Data Innovation in Science, Seoul National University（科学数据创新研究所，首尔大学）；Department of Materials Science and Engineering, Kyung Hee University（材料科学与工程系，庆熙大学）
Field-induced magnetic phase transitions and transport anomalies in GdAlSi
Zhejiang University（浙江大学）；Zhejiang University of Technology（浙江工业大学）；Anhui University（安徽大学）；Institute of Physical Science and Information Technology, Anhui University（安徽大学物理科学与信息技术研究院）；State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University（浙江大学硅材料与先进半导体技术国家重点实验室）；Hefei National Laboratory（合肥国家实验室）
