arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1609.06997cond-mat.mtrl-sci
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用于玻璃上液相晶化硅薄膜太阳能电池的光滑抗反射三维织构

Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass

David Eisenhauer, Grit Köppel, Klaus Jäger, Duote Chen, Oleksandra Shargaieca, Bernd Rech, Christiane Becker

摘要:

近年来,硅薄膜的液相晶化已成为薄膜光电子学的一个有前途的候选者。在10 μm的薄吸收体上,达到了晶片等效的形貌和开路电压,导致12.1%的创纪录效率。然而,短路电流密度仍然是有限的,主要是由于在玻璃-硅界面的光损耗。虽然该界面处的纳米结构已被证明可以有效地减少反射,但到目前为止,这些纹理导致复合增加。因此,由于电子损耗,光学增益被减轻。在这里,为了克服这种权衡,引入了平滑抗反射三维(SMART)纹理。三维模拟和实验结果表明,通过在纳米压印的SiOx纳米柱阵列上旋涂TiOx层,可以显著提高激光晶化硅太阳能电池的光捕获性能。同时,SMART纹理的光滑表面形态允许保持与平面参考样品相当的电子材料质量,并在8 μm薄液相结晶硅太阳能电池中达到640 mV以上的Voc值。此外,短路电流密度jsc可以从具有已经优化的抗反射中间层堆叠的平面参考电池的21.0mA cm-2增加到SMART纹理上的23.3mA cm-2,对应于11%的相对增加。

英文摘要:

Recently, liquid-phase crystallization of thin silicon films has emerged as a promising candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to a record efficiency of 12.1%. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused an increase in recombination. Therefore, optical gains were mitigated due to electronic losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced in order to overcome this trade-off. By smoothing nanoimprinted SiOx nano-pillar arrays with spin-coated TiOx layers, light-trapping properties of laser-crystallized silicon solar cells could significantly be improved as successfully shown in three-dimensional simulations and in experiment. At the same time, the smooth surface morphology of SMART textures allows preserving electronic material quality equivalent to that of planar reference samples and reaching Voc values above 640 mV in 8 μm thin liquid-phase crystallized silicon solar cells. Furthermore, the short-circuit current density jsc could be increased from 21.0 mA cm-2 for planar reference cells with already optimized anti-reflective interlayer stacks to 23.3 mA cm-2 on SMART textures, corresponding to a relative increase of 11%.

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