优化FASPAX N in P硅传感器的浮动保护环设计
Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors
摘要：
FASPAX（费米-阿贡半导体像素阵列X射线探测器）是一种快速集成的区域探测器，具有广泛的动态范围，用于升级后的高级光子源（APS）的时间分辨应用。FASPAX是一种具有预期$\mbox{13 $ MHz $}$图像速率的突发模式探测器，它还将采用一种新型集成电路，以实现从单光子灵敏度到$10^{\text{5}}$ x射线/像素/脉冲的宽动态范围。为了实现这些雄心勃勃的目标，需要一种新型的硅传感器设计。本文将详细介绍FASPAX传感器的早期设计。将介绍TCAD优化研究的结果和原型传感器的表征。
英文摘要：
FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended $\mbox{13 $MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $10^{\text{5}}$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
