基于单个忆阻器的非易失性多电平存储器和布尔逻辑门
Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor
摘要：
通过非线性磁电效应将电荷和磁通量关联起来的忆阻器在开发下一代非易失性器件方面具有巨大的潜力。除了多电平非易失性存储器，我们在这里证明，非易失性逻辑门，如NOR和NAND可以在一个单一的忆阻由Ni/PMN-PT/Ni异质结构。在施加两个双极性电压脉冲（X1，X2）作为忆阻器上的逻辑输入之后，输出磁电电压可以是正高（逻辑“1”）、正低（逻辑“0”）或负（逻辑“0”），这取决于X1和X2的电平。其基本的物理机制与通过输入选择性电压脉冲控制铁电极化的完全或部分反转有关，这决定了磁电电压系数的大小和符号。存储器和逻辑的组合功能可以使忆阻器成为未来计算系统超越冯·诺依曼架构的有希望的候选者。
英文摘要：
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic "1"), positive low (logic "0"), or negative (logic "0"), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.
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