SrRuO $_3$外延膜与Sr $_2$ RuO $_4$单晶界面的感生磁矩
Induced ferromagnetic moment at the interface between epitaxial SrRuO$_3$ film and Sr$_2$RuO$_4$ single crystal
摘要：
SrRuO $_3$（SRO 113）是一种重要的器件物理材料，尤其是作为铁电器件的最佳金属氧化物电极之一。该氧化物具有中等的电子相关性，具有铁磁有序等新特性，可用于自旋电子学和超导自旋电子学器件。最近，我们观察到强烈的增强磁化的自旋三重态超导体Sr $_2$ RuO $_4$（SRO 214）的单晶上生长的SRO 113薄膜。为了澄清这种增强的起源，我们进行了系统的调查SRO 113薄膜沉积在各种氧化物衬底上的磁性。我们仔细减去衬底的贡献，发现增强2磁化只发生在SRO 113/SRO 214膜。我们进一步发现，无论是应变，也没有金属性的基板发挥任何显着的作用，在增强。X射线磁性圆二色性表明，衬底诱导的应变并不能使Ru ~（4+）从低自旋态转变为高自旋态. SRO 113/SRO 214膜的磁化强度的膜厚度依赖性强烈地表明，由于磁矩感应到SRO 214衬底超过20 nm的深度，产生额外的磁化强度。我们的研究结果意味着新的磁性功能，可以触发研究，寻找尚未未知的物理现象，在磁性磁共振。
英文摘要：
SrRuO$_3$ (SRO113) is an important material for device physics particularly as one of the best metallic oxide electrodes for ferroelectric devices. This oxide has moderate electron correlations with novel properties including ferromagnetic ordering, which can be utilized in future to spintronics and superconducting spintronics devices. Recently, we observed strongly enhanced magnetization of SRO113 thin films grown on single crystals of the spin-triplet superconductor Sr$_2$RuO$_4$ (SRO214). To clarify the origin of such an enhancement, we conducted systematic investigations of magnetic properties of SRO113 films deposited on a variety of oxide substrates. We carefully subtracted the substrate contributions and found that the enhanced 2 magnetization occurs only for SRO113/SRO214 films. We further found that neither strain nor metallicity of the substrate plays any significant roles in the enhancement. The X-ray magnetic circular dichroism reveals that the substrate-induced strain does not switch the Ru4+ state from the low-spin to high-spin states. The film-thickness dependence of the magnetization of SRO113/SRO214 films strongly suggest that the additional magnetization arises due to the induction of magnetic moment into the SRO214 substrate over 20-nm depth. Our results imply new magnetic functionality that can trigger studies searching for yet unknown physical phenomena in magnetic ruthenates.
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