具有电解质门控的ReS2中的无序工程和电导率圆顶
Disorder engineering and conductivity dome in ReS2 with electrolyte gating
摘要：
原子薄的硫化铼（ReS 2）是过渡金属二硫属化物（TMDC）家族的一员，其特征在于弱的层间耦合和扭曲的1 T结构。在这里，我们报告的单和多层ReS 2与聚合物电解质门控的电输运研究。我们发现单层ReS 2的导电性在高载流子密度下完全被抑制，这是单层所特有的一个不寻常的特征，使得ReS 2成为这种材料的第一个例子。虽然较厚的ReS 2薄片也表现出导电性圆顶和绝缘体-金属-绝缘体序列，但它们在高掺杂密度下没有显示出完全的导电性抑制。使用双栅器件，我们可以区分栅诱导掺杂和聚合物电解质本身诱导的静电无序。理论计算和输运模型表明，所观察到的电导率抑制可以解释为一个狭窄的导带和安德森局域化由于电解质诱导的无序的组合。
英文摘要：
Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densities, an unusual feature unique to monolayers, making ReS2 the first example of such a material. While thicker flakes of ReS2 also exhibit a conductivity dome and an insulator-metal-insulator sequence, they do not show a complete conductivity suppression at high doping densities. Using dual-gated devices, we can distinguish the gate-induced doping from the electrostatic disorder induced by the polymer electrolyte itself. Theoretical calculations and a transport model indicate that the observed conductivity suppression can be explained by a combination of a narrow conduction band and Anderson localization due to electrolyte-induced disorder.
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