Using a combination of kinetic Activation Relaxation Technique with empirical potential and ab initio based climbing image nudged elastic band method, we perform an extensive search of the migration and rotation paths of the most stable carbon tri-interstitial cluster in cubic SiC. Our research reveals paths with the lowest energy barriers to migration, rotation, and dissociation of the most stable cluster. The kinetic properties of the most stable cluster, including its mobility, rotation behavior at different temperatures and stability against high temperature annealing, are discussed based on the calculated transition barriers. In addition to fundamental insights, our study provides a methodology for investigation of other extended defects in a technologically important material.
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.
The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon interstitials, namely the tetrahedrally carbon-coordinated interstitial and the <110>-oriented split-interstitial, are found to be by far more mobile than the vacancies. The metastability of the silicon vacancy, which transforms into a vacancy-antisite complex in p-type and compensated material, kinetically suppresses its contribution to diffusion processes. T…
The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion of vacancies and interstitials to defect sinks (e.g. surfaces or dislocations) as well as the formation of interstitial-clusters are considered. The calculated migration and reaction barriers suggest a hierarchical ordering of competing annealing mechanisms. The higher mobility of carbon and silicon interstitials as compared to the vacancies drives the annealing mechanims at lower temperatures including the vacancy-i…
We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective masses in various polytypes of SiC. We find that the channel length, rather than the hexagonality prevailed in the past, is the decisive factor for the band-gap variation in the polytypes. We also find that the floating nature causes two-dimensional electron and hole systems at the interface of different SiC polytypes and even one-dimensional channels near the…
We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition. We applied a hybrid functional that reproduces the experimental bandgap of SiC well and offers reliable defect properties. For point defects, we investigated single vacancies, antisites, and interstitials of Si and C on relevant sites. For carbon clusters, we systematically introduced two additional C atoms into the perfect 4H-SiC lattice with and without removing Si ato…
The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) well above the SiC bulk phonon spectrum. In particular, the compact antisite clusters exhibit high-frequency LVM's up to 250meV. The isotope shifts resulting from a_{13}C enrichment are analyzed. In the …
The influence of implantation-induced point defects (PDs) on SiC oxidation is investigated via molecular dynamics simulations. PDs generally increase the oxidation rate of crystalline grains. Particularly, accelerations caused by Si antisites and vacancies are comparable, and followed by Si interstitials, which are higher than those by C antisites and C interstitials. However, in the grain boundary (GB) region, defect contribution to oxidation is more complex, with C antisites decelerating oxidation. The underlying reason is the formation of a C-rich region along the oxygen diffusion pathway t…
Under irradiation, SiC develops damage commonly referred to as black spot defects, which are speculated to be self-interstitial atom clusters. To understand the evolution of these defect clusters and their impacts (e.g., through radiation induced swelling) on the performance of SiC in nuclear applications, it is important to identify the cluster composition, structure, and shape. In this work the genetic algorithm code StructOpt was utilized to identify groundstate cluster structures in 3C-SiC. The genetic algorithm was used to explore clusters of up to ~30 interstitials of C-only, Si-only, an…
Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct identification of C$_{i}$-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4H-SiC, to charge state transitions of the C$_{i}$ defect …
Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expecte…
Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. Here we report experiments which indeed confirm the existence of a low-energy mode for the U-center (as well as for the HT3- and HT4-centers with spectral details similar to the U-center). We calculated the isotope splitting for the (C_3)_Si-defect and …
We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the utility of combining tight-binding molecular dynamics with \textit{ab initio} density functional calculations to probe diffusion mechanisms. Using density functional theory to obtain diffusion barriers and…
The diffusion of silver (Ag) impurities in high energy grain boundaries (HEGBs) of cubic (3C) silicon carbide (SiC) is studied using an ab initio based kinetic Monte Carlo (kMC) model. This study assesses the hypothesis that the HEGB diffusion is responsible for Ag release in Tristructural-Isotropic fuel particles, and provides a specific example to increase understanding of impurity diffusion in highly disordered grain boundaries. The HEGB environment was modeled by an amorphous SiC. The structure and stability of Ag defects were calculated using density functional theory code. The defect ene…
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000°C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the tran…
The subcarbides B12C3 and B13C2 known for their abrasive properties, can be structurally considered as carbon inserted rhombohedral alpha-B12 and expressed as B12{C-C-C} and B12(C-B-C). Using density functional theory DFT computations, the substitution of the central atom in the linear triatomic interstitials by N leads to an original new boron subcarbonitride B12C2N or B12(C-N-C) identified as slightly more cohesive than the two subcarbides. While B12C3 is insulating with a E(Gap) close to 0.2 eV, and B13C2 a weak metal with small density of state DOS at the Fermi level, B12C2N ground state i…
The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant species. In all cases considered, the impurities diffuse like ions without any tendency of localizing charge. Li, Mg, and to some extent Na, diffuse almost isotropically in GaN, with average diffusion barriers of 1.1, 2.1, and 2.5 eV, respectively. Instead Be shows a marked anisotropy with energy barriers of 0.76 and 1.88 eV for diffusion paths perpendicular a…
Heterostructures made of stacked 2D materials with different electronic properties are studied for their potential in creating multifunctional devices. Graphene (G) and hexagonal boron nitride (h-BN) van der Waals (vdW) systems have been extensively researched, including recent studies on synthesizing h-BN on graphene/SiC(0001) templates. These studies suggest that h-BN encapsulation could occur in addition to vdW epitaxy. This work presents theoretical research on G/h-BN heterostructures on SiC(0001) with a carbon buffer layer. The results show an energetic preference for h-BN encapsulation b…
This paper assesses the importance of three-body triple dipole interactions for quasi-one dimensional phases of He, Ne, H_2, Ar, Kr and Xe confined within interstitial channels or on the external surfaces of nanotube bundles. We find the substrate-mediated contribution to be substantial: for interstitial H_2 the well depth of the effective pair potential is reduced to approximately one half of its value in free space. We carry out ab initio calculations on linear and equilateral configurations of H_2 trimer and find that overlap interactions do not greatly change the DDD interaction in the lin…
From Mono- to Hexa-Interstitials: Computational Insights into Carbon Defects in Diamond
HUN-REN Wigner Research Centre for Physics（匈牙利科学院维格纳物理研究中心）；Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics（布达佩斯技术与经济大学物理研究所原子物理系）；European Laboratory for Learning and Intelligent Systems (ELLIS) Institute Finland（欧洲学习与智能系统实验室芬兰研究所）；Department of Technical Physics, University of Eastern Finland（东芬兰大学技术物理系）；MTA-WFK Lendület “Momentum” Semiconductor Nanostructures Research Group（匈牙利科学院-维格纳物理研究所Lendulet“动量”半导体纳米结构研究组）
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very fe…
The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers
CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors, at the Institute for Microelectronics, TU Wien（维也纳工业大学微电子研究所多尺度半导体器件与传感器工艺建模中心）；Silvaco Europe Ltd.（Silvaco欧洲有限公司）
3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties) and the possibility of a direct integration in the Si technology. Here we use a multiscale approach, based on both classical molecular dynamics (MD) simulations and first-principle calculations, to i…
Molecular dynamics simulation study of mechanical properties of 3C-SiC with extended defects
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院 V. 拉什卡拉里夫半导体物理研究所）；Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv（基辅塔拉斯舍甫琴科国立大学高等技术教育科学研究所）；National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”（乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院”）
Diffusion of interstitial alloying elements like H, O, C, and N in metals and their continuous relocation and interactions with their microstructures have crucial influences on metals properties. However, besides limitations in experimental tools in capturing these mechanisms, the inefficiency of numerical tools also inhibits modeling efforts. Here, we present an efficient framework to perform hybrid grand canonical Monte Carlo and molecular dynamics simulations that allow for parallel insertion/deletion of Monte Carlo moves. A new methodology for calculation of the energy difference at trial …
We report on the structure and adsorption properties of Pd$_n$ ($n=1-4$) clusters supported on the rutile TiO$_2$ (110) surfaces with the possible presence of a surface oxygen vacancy or a subsurface Ti-interstitial atom. As predicted by the density functional theory, small Pd clusters prefer to bind to the stoichiometric titania surface or at sites near subsurface Ti-interstitial atoms. The adsorption of Pd clusters changes the electronic structure of the underlying surface. For the surface with an oxygen vacancy, the charge localization and ferromagnetic spin states are found to be largely a…
The overall large ionic character of MgH2 is reduced by inserting light elements from the first period, B and C, using a trirutile host superstructure. Both elements are found destabilizing to the structure with largely positive cohesive energy with interstitial B and slightly negative cohesive energy with interstitial C. This trend is also observed for low amounts of insertion down to (B,C)0.167MgH2. From the Bader charge analysis the largely ionic character of hydrogen is decreased to an average H-0.37 in the neighborhood of C and H-0.75 for the other hydrogen atoms atoms (resp. H-0.64 and H…
On the basis of the pseudopotential plane-wave(PP-PW) method and the local-density-functional theory(LDFT), this paper studies energetics, stress-strain relation, stability and ideal strength of $β$-SiC under various loading modes, where uniform uniaxial extension and tension, biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants and moduli of equilibrium state are calculated, and the results agree well with the experimental data. As the four Si-C bonds along directions [111], [$\bar{1}$11], [11$\bar{1}$] and [1$\bar{1}$1] are n…
Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and penta-vacancies in silicon. These new configurations consist of combinations of a ring-hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than the ``part of a hexagonal ring'' configurations, believed up to now to be the lowest-energy states.
