一种用于CCD相对反射率测量的新型反射计
A Novel Reflectometer for Relative Reflectance Measurements of CCDs
摘要：
背照式电荷耦合器件（CCD）的高量子效率（QE）已经进入了大规模天文观测的时代。这些器件的QE可以大于90%，并且取决于工作温度、器件厚度、背面充电机制和抗反射（AR）涂层。但是在光波长下，QE很好地近似为1减去反射率，因此这些器件的背面反射率的测量提供了它们的QE的第二个独立测量。我们已经设计并构建了一种新的仪器来测量CCD探测器的相对镜面反射率，该设备的很大一部分使用3D熔融沉积模型（FDM）打印机构建。该器件采用监测和测量光电二极管，以同时收集入射和反射测量值，从而减少相对反射率校准过程引入的误差。虽然大多数相对反射计高度依赖于精确可重复的目标距离进行精确测量，但我们已经实现了一种测量方法，可以最大限度地减少这些误差。利用反射计测量了两种型号的滨松CCD探测器的反射率。第一个器件是Hamamatsu 2k x 4k背照式高电阻率p型硅探测器，其已被优化为在380 nm - 650 nm的蓝光下工作。第二检测器是2k x 4k背面照射的高电阻率p型硅检测器，其被优化用于640 nm - 960 nm的红光。我们不仅能够测量这些设备的反射率作为波长的函数，我们还采样了反射率作为设备上的位置的函数，并发现了这些设备的反射梯度。
英文摘要：
The high quantum efficiencies (QE) of backside illuminated charge coupled devices (CCD) has ushered in the age of the large scale astronomical survey. The QE of these devices can be greater than 90 %, and is dependent upon the operating temperature, device thickness, backside charging mechanisms, and anti-reflection (AR) coatings. But at optical wavelengths the QE is well approximated as one minus the reflectance, thus the measurement of the backside reflectivity of these devices provides a second independent measure of their QE. We have designed and constructed a novel instrument to measure the relative specular reflectance of CCD detectors, with a significant portion of this device being constructed using a 3D fused deposition model (FDM) printer. This device implements both a monitor and measurement photodiode to simultaneously collect incident and reflected measurements reducing errors introduced by the relative reflectance calibration process. While most relative reflectometers are highly dependent upon a precisely repeatable target distance for accurate measurements, we have implemented a method of measurement which minimizes these errors. Using the reflectometer we have measured the reflectance of two types of Hamamatsu CCD detectors. The first device is a Hamamatsu 2k x 4k backside illuminated high resistivity p-type silicon detector which has been optimized to operate in the blue from 380 nm - 650 nm. The second detector being a 2k x 4k backside illuminated high resistivity p-type silicon detector optimized for use in the red from 640 nm - 960 nm. We have not only been able to measure the reflectance of these devices as a function of wavelength we have also sampled the reflectance as a function of position on the device, and found a reflection gradient across these devices.
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