单层WS2导带中的应变控制自旋劈裂
Strain-controlled spin splitting in the conduction band of monolayer WS2
摘要：
WS 2单层（ML）导带最低点（CBM）中出现的自旋分裂带在自旋谷耦合电子等新的自旋轨道现象中发挥着重要作用。然而，应变的应用强烈地改变了WS2 ML的电子性质，预计这将显著影响自旋分裂带的性质。在这里，通过使用完全相对论性的第一性原理计算的基础上密度泛函理论，我们表明，大量的自旋分裂带中观察到的CBM是有效的控制和调整，通过施加双轴应变。我们还发现，这些自旋分裂带诱导自旋纹理表现出完全的面外自旋极化在相反的方向之间的K和Q点和它们的时间反转在第一布里渊区。我们的研究表明，应变在WS2 ML的自旋轨道耦合中起着重要的作用，这对设计未来的自旋电子学器件具有非常重要的意义。
英文摘要：
Spin splitting bands that arises in conduction band minimum (CBM) of WS2 monolayer (ML) play an important role in the new spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies electronic properties of the WS2 ML, which is expected to significantly affect to the properties of the spin splitting bands. Here, by using fully-relativistic first-principles calculations based on density-functional theory, we show that a substantial spin spliting bands observed in the CBM is effectively controlled and tuned by applying the biaxial strain. We also find that these spin splitting bands induce spin textures exhibiting fully out-of-plane spin polarization in the opposite direction between the K and Q points and their time reversals in the first Brillouin zone. Our study clarify that the strain plays an significant role in the spin-orbit coupling of the WS2 ML, which has very important implications in designing future spintronics devices.
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