MoS $_2$的电吸收
Electroabsorption in MoS$_2$
摘要：
为了将电信号转换为光信号，人们使用电场对材料的折射率或吸收率的调制。当代的电吸收调制器（EAM）利用量子限制斯塔克效应（QCSE）、场诱导的红移和低维半导体结构的强激子吸收共振特性的加宽。在这里，我们展示了一个前所未有的强大的横向电吸收（EA）信号在一个单层的二维半导体二硫化钼。EA光谱是占主导地位的一个明显的线宽加宽约15%，在调制电压只有Vpp = 0.5 V。相反，传统的QCSE，信号线性增加与所施加的电场强度和强烈重叠的激子和trion共振之间的距离的线性变化。可实现的调制深度超过0.1 dBnm-1，为集成光子学（包括片上光通信）提供了极其紧凑、超快、节能的EAM。
英文摘要：
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark effect (QCSE), the field-induced red-shift and broadening of the strong excitonic absorption resonances characteristic of low-dimensional semiconductor structures. Here we show an unprecedentedly strong transverse electroabsorption (EA) signal in a monolayer of the two-dimensional semiconductor MoS2. The EA spectrum is dominated by an apparent linewidth broadening of around 15% at a modulated voltage of only Vpp = 0.5 V. Contrary to the conventional QCSE, the signal increases linearly with the applied field strength and arises from a linear variation of the distance between the strongly overlapping exciton and trion resonances. The achievable modulation depths exceeding 0.1 dBnm-1 bear the scope for extremely compact, ultrafast, energy-efficient EAMs for integrated photonics, including on-chip optical communication.
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