三族氮化物发光二极管的电学特性：基于复合的注入模型和电效率与电致发光冷却的理论极限
Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
摘要：
研究了生长在体GAN衬底上的三族氮化物量子阱发光二极管（LED）的电流-电压特性和理想因子。在工作温度下，这些电性能表现出简单的行为。一个模型，其中只有有源区重组有贡献的LED电流被发现占实验结果。LED电效率的限制进行了讨论的基础上的模型和热力学参数，并检查电致发光冷却的影响。
英文摘要：
The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.
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