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arXiv 1606.09124physics.flu-dynastro-ph.SRphysics.geo-ph
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不良导体下的内热对流

Internally heated convection beneath a poor conductor

David Goluskin

摘要:

我们考虑内部加热的流体层中的对流,该流体层下面由完美绝缘体限定,上面由不良导体限定。导热不良的边界是由一个固定的热通量。使用单独的分析方法,我们找到的静态的线性和能量稳定性阈值,我们构建了一个下限的平均温度,适用于所有流量。线性稳定性分析产生瑞利数,在该瑞利数以上静态是线性不稳定的($R_L$),并且能量分析产生瑞利数,在该瑞利数以下静态是全局稳定的($R_E$)。对于各种边界条件的速度,精确的表达式为$R_L$和$R_E$发现使用长波长渐近。每个$R_E$严格小于相应的$R_L$,但在1%以内。平均温度的下限证明了无滑移速度边界条件使用背景方法。该边界保证了流体的平均温度相对于上边界的平均温度随加热速率($H$)的增长不慢于$H^{2/3}$。

英文摘要:

We consider convection in an internally heated layer of fluid that is bounded below by a perfect insulator and above by a poor conductor. The poorly conducting boundary is modelled by a fixed heat flux. Using solely analytical methods, we find linear and energy stability thresholds for the static state, and we construct a lower bound on the mean temperature that applies to all flows. The linear stability analysis yields a Rayleigh number above which the static state is linearly unstable ($R_L$), and the energy analysis yields a Rayleigh number below which it is globally stable ($R_E$). For various boundary conditions on the velocity, exact expressions for $R_L$ and $R_E$ are found using long-wavelength asymptotics. Each $R_E$ is strictly smaller than the corresponding $R_L$ but is within 1%. The lower bound on the mean temperature is proven for no-slip velocity boundary conditions using the background method. The bound guarantees that the mean temperature of the fluid, relative to that of the top boundary, grows with the heating rate ($H$) no slower than $H^{2/3}$.

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