SANTA：用于探测亚20 nm器件的焦耳加热自对准纳米沟槽烧蚀
SANTA: Self-Aligned Nanotrench Ablation via Joule Heating for Probing Sub-20 nm Devices
摘要：
在纳米尺度上操纵材料是具有挑战性的，特别是如果需要与纳米级电极对准的话。在这里，我们描述了一个光刻免费，自对准纳米沟槽烧蚀（SANTA）技术，在聚合物，如聚（甲基）甲基丙烯酸酯（PMMA）创建纳米级的沟槽。纳米沟槽通过简单的焦耳加热过程与碳纳米管（CNT）和石墨烯带电极自对准。使用模拟和实验，我们研究如何焦耳功率，环境温度，PMMA的厚度，和基板的属性可以提高这种技术的空间分辨率。我们首次通过降低环境温度和减小PMMA厚度来实现子20 nm纳米沟槽。我们还展示了一个功能纳米电阻存储器（RRAM）位自对准的CNT控制设备，通过桑塔的方法实现。这种技术提供了一种优雅和廉价的方法来探测纳米级器件使用自对准电极，而不使用传统的对准或光刻步骤。
英文摘要：
Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigate how the Joule power, ambient temperature, PMMA thickness, and substrate properties can improve the spatial resolution of this technique. We achieve sub-20 nm nanotrenches for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrate a functioning nanoscale resistive memory (RRAM) bit self-aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps.
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