位控AlGaN/GaN横向纳米线中一维室温量子输运的边缘场控制
Fringe field control of one-dimensional room temperature quantum transport in site controlled AlGaN/GaN lateral nanowires
摘要：
我们已经证明了有效的边缘场控制的一维电子气（1-DEG）在AlGaN/GAN横向纳米线。纳米线的位置控制和形成的干法和各向异性湿法蚀刻的组合。纳米线尺寸被很好地控制，并且可以具有10 μ m/5 nm或更大的非常高的长/宽纵横比。输运由条纹门控制，并显示室温量子输运，其中1-D子带的逐渐填充表现为在晶体中的振荡。边缘栅的阈值电压耗尽的一维电子气被发现增加，增加漏极电压表示有效的控制1-DEG。除了传统的几何电容，考虑到量子电容的传输特性和边缘场操作的解释。讨论了纳米线宽度和边缘栅位置对器件性能的影响。
英文摘要：
We have demonstrated effective fringe field control of one-dimensional electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combination of dry and anisotropic wet etching. The nanowire dimensions are well controlled and can have a very high length/width aspect ratio of 10 um/5 nm or larger. The transport is controlled by a fringe gate and shows room temperature quantum transport where gradual filling of 1-D subbands gets manifested as oscillations in the transconductance. The fringe gate threshold voltage for depletion of one-dimensional electron gas is found to increase with increasing drain voltage indicating efficient control of 1-DEG. The transport characteristics and fringe field operation are explained by taking into account quantum capacitance in addition to the conventional geometric capacitance. The effect of nanowire width and fringe gate position is also discussed.
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