PrAlO $_3$ / SrTiO $_3$界面的自旋轨道相互作用和近藤散射：氧含量的影响
Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content
摘要：
本文报道了生长过程中氧分压（$P_{O_{2}}$）对在$\rm TiO_{2}$封端的SrTiO $_3$衬底上生长的PrAlO $_3$薄膜的电磁性质的影响。电阻率测量显示，随着$P_{O_{2}}$的增加，薄层电阻增加。在低温下薄层电阻的温度依赖性与$P_{O_{2}} \ge 10^{-5}$的近藤理论一致。霍尔效应数据表现出复杂的温度依赖性，表明补偿载流子密度。我们观察到的行为与两种不同类型的运营商在界面生长在$P_{O_{2}} \ge 10^{-4}$硅。对于这些接口，我们测量到一个温和的正磁阻（MR）由于一个强大的自旋轨道（SO）在低磁场的相互作用，演变成一个更大的负MR在高场。正的高MR值与其中一部分载流子来自氧空位的样品相关联。MR数据的分析允许提取SO相互作用临界场（例如，对于$P_{O_{2}}=10^{-5}$，$ H_{SO}=$ 1.25 T）。弱的反本地化效应，由于一个强大的SO相互作用变得更小的$P_{O_{2}}$生长的样品，其中MR值是由近藤效应，特别是在高磁场占主导地位。
英文摘要：
We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $\rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance as $P_{O_{2}}$ is increased. The temperature dependence of the sheet resistance at low temperatures is consistent with Kondo theory for $P_{O_{2}} \ge 10^{-5}$ torr. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at interfaces grown at $P_{O_{2}} \ge 10^{-4}$ torr. For these interfaces, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields. Positive high MR values are associated with samples where a fraction of carriers are derived from oxygen vacancies. Analysis of the MR data permitted the extraction of the SO interaction critical field ( e.g. $ H_{SO}=$1.25 T for $P_{O_{2}}=10^{-5}$ torr). The weak anti-localization effect due to a strong SO interaction becomes smaller for higher $P_{O_{2}}$ grown samples, where MR values are dominated by the Kondo effect, particularly at high magnetic fields.
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