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arXiv 1606.01690cond-mat.mes-hall
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用于低场电导开关的磁致伸缩Fe73Ga27纳米接触

Magnetostrictive Fe73Ga27 nanocontacts for low field conductance switching

U. M. Kannan S. Kuntz O. Berg, Wolfram Kittler, Himalay Basumatary, J. Arout Chelvane, C. Suergers, S. Narayana Jammalamadaka

摘要:

由Galfenol Fe 73 Ga 27制成的磁致伸缩纳米接触的电导G可以在10 K下在20至30 mT的低磁场中在开和关状态之间可再现地切换。的开关行为是在协议的磁场依赖性的磁致伸缩推断的磁化行为,导致沿磁场的正磁致伸缩应变。由于训练效应,重复的磁场循环导致稳定的接触几何形状和坚固的接触配置,在打开和闭合接触之间具有非常低的1mT滞后。非整数倍的电导量子G 0观察G大于G0是由于电子背散射在接触界面附近的电极中的缺陷位点。当接触被机械地或通过磁场闭合时,由于电子隧穿,电导在低于G0时显示指数行为。这允许估计在10 K下的磁致伸缩。结果表明,这种磁致伸缩装置适合在未来纳米技术应用中通过低磁场遥控电导。

英文摘要:

The electrical conductance G of magnetostrictive nanocontacts made from Galfenol Fe73Ga27 can be reproducibly switched between on and off states in a low magnetic field of 20 to 30 mT at 10 K. The switching behavior is in agreement with the magnetic field dependence of the magnetostriction inferred from the magnetization behavior, causing a positive magnetostrictive strain along the magnetic field. The repeated magneticfield cycling leads to a stable contact geometry and to a robust contact configuration with a very low hysteresis of 1 mT between opening and closing the contact due to a training effect. Nonintegral multiples of the conductance quantum G0 observed for G is greater than G0 are attributed to electron backscattering at defect sites in the electrodes near the contact interface. When the contact is closed either mechanically or by magnetic field, the conductance shows an exponential behavior below G0 due to electron tunneling. This allows to estimate the magnetostriction at 10 K. The results demonstrate that such magnetostrictive devices are suitable for the remote control of the conductance by low magnetic fields in future nanotechnology applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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