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arXiv 1605.08528cond-mat.str-el
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氧化物二维电子系统的Hydrostatic pressure响应

Hydrostatic pressure response of an oxide two-dimensional electron system

J. Zabaleta, V. S. Borisov, R. Wanke, H. O. Jeschke, S. C. Parks, B. Baum, A. Teker, T. Harada, K. Syassen, T. Kopp, N. Pavlenko, R. Valentí, J. Mannhart

摘要:

二维电子系统具有迷人的性质存在于标准半导体的多层膜,氦表面和氧化物中。与半导体的二维(2D)电子气相比,氧化物中的2D电子系统通常具有更强的相关性,并且对宿主晶格的微观结构更敏感。这种灵敏度表明,氧化物2D系统是高度可调的流体静压。在这里,我们探索了流体静压力对LaAlO $_{3}$ -SrTiO $_{3}$界面处形成的良好表征的2D电子系统的影响[1],并测量了显著的、意想不到的响应。$\sim$ 2 GPa的压力在4 K下可逆地使2D载流子密度$n_{s}$加倍。随着$n_{s}$含量的增加,压力下电导率和迁移率降低。第一原理压力模拟揭示了相同的行为的载流子密度,并提出了一种可能的机制的迁移率降低,基于两种材料的介电性质和它们的变化在外部压力下。

英文摘要:

Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems in oxides are typically more strongly correlated and more sensitive to the microscopic structure of the hosting lattice. This sensitivity suggests that the oxide 2D systems are highly tunable by hydrostatic pressure. Here we explore the effects of hydrostatic pressure on the well-characterized 2D electron system formed at LaAlO$_{3}$ -SrTiO$_{3}$ interfaces[1] and measure a pronounced, unexpected response. Pressure of $\sim$2 GPa reversibly doubles the 2D carrier density $n_{s}$ at 4 K. Along with the increase of $n_{s}$, the conductivity and mobility are reduced under pressure. First-principles pressure simulations reveal the same behavior of the carrier density and suggest a possible mechanism of the mobility reduction, based on the dielectric properties of both materials and their variation under external pressure.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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