应变弛豫和Burstein-Moss能移对自晶种催化生长InN薄膜光学性质的影响
Effect of Strain Relaxation and the Burstein-Moss Energy Shift on the Optical Properties of InN Films Grown in the Self-Seeded Catalytic Process
摘要：
首次采用常压化学气相沉积技术在蓝宝石衬底上生长了高光学质量的InN薄膜。采用自催化方法来克服InN薄膜的成核势垒。在该过程中，在反应性NH3的存在下进行成核位点的接种和随后的生长。利用拉曼光谱和光致发光光谱研究了应变和Burstein-Moss（BM）能移对InN薄膜光学性质的影响。拉曼光谱分析表明，在所有的薄膜中存在压应变，并发现随着生长温度的升高而松弛。在620 ℃生长的薄膜中，随着等离子体-声子相互作用的开始，观察到A1（LO）声子模的非对称展宽。观察到InN的带隙（1.2 eV）的大的蓝移作为膜中的压缩应变以及BM位移的集体结果。使用光致发光光谱中的BM位移来计算载流子密度。最后，由于薄膜中存在压应变以及BM效应，进一步观察到带边发射的蓝移。
英文摘要：
For the first time, high optical quality InN films were grown on sapphire substrate using atmospheric chemical vapour deposition technique in the temperature range of 560-650 oC. Self-catalytic approach was adopted to overcome the nucleation barrier for depositing InN films. In this process, seeding of the nucleation sites and subsequent growth was performed in the presence of reactive NH3. We investigated the simultaneous effect of strain and Burstein-Moss (BM) energy shift on optical properties of InN films using Raman and photoluminescence spectroscopy. Existence of compressive strain in all films is revealed by Raman spectroscopic analysis and is found to relax with increasing growth temperature. The asymmetric broadening of the A1(LO) phonon mode is observed with the onset of plasmon-phonon interaction for films grown at 620 oC. Large blue shift of the band gap of InN (1.2 eV) is observed as a collective result of compressive strain in films as well as BM shift. Carrier density is calculated using the BM shift in the photoluminescence spectra. Finally, blue shift in band edge emission is observed further because of the presence of compressive strain in the films along with the BM effect.
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