具有不饱和磁阻的补偿半金属LaSb
Compensated semimetal LaSb with unsaturated magnetoresistance
摘要：
通过结合角分辨光电子能谱和量子振荡测量，我们对LaSb的电子结构进行了全面的研究，LaSb在高达40 T的磁场下表现出近二次极大的磁电阻（XMR），没有任何饱和迹象.我们清楚地解决了一个球形和一个相交的椭圆形孔费米面（FS）在布里渊区（BZ）中心$Γ$和一个椭圆形的电子FS在BZ边界$X$。从封闭的FS体积计算的空穴和电子载流子得到了完美的补偿，并且载流子补偿不受温度的影响。我们进一步揭示，LaSb是拓扑平凡的，但有许多相似之处与Weyl半金属TaAs家族在体电子结构。基于这些结果，我们研究了迄今为止提出的解释半金属中近二次XMR的机制。
英文摘要：
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center $Γ$ and one ellipsoidal electron FS at the BZ boundary $X$. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but share many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
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