By applying the infinite-mass boundary condition, we analytically calculate the confined states and the corresponding wave functions of AA-stacked bilayer graphene quantum {dots} in the presence of an uniform magnetic field $B$. It is found that the energy spectrum shows two set of levels, which are the double copies of the energy spectrum for single layer graphene, shifted up-down by $+γ$ and $-γ$, respectively. However, the obtained spectrum exhibits different symmetries between the electron and hole states as well as the intervalley symmetries. It is noticed that, the applied magnetic field breaks all symmetries, except one related to the intervalley electron-hole symmetry, i.e. $E^e(τ,m)=-E^h(τ,m)$. Two different regimes of confinement are found: the first one is due to the infinite-mass barrier at weak $B$ and the second is dominated by the magnetic field as long as $B$ is large. We numerically investigated the basics features of the energy spectrum to show the main similarities and differences with respect to monolayer graphene, AB-stacked bilayer graphene and semiconductor quantum dots.
We theoretically analyze the energy spectrum of a quantum ring in AA-stacked bilayer graphene with radius $R$ for a zero width subjected to a perpendicular magnetic field $B$. An analytical approach, using the Dirac equation, is implemented to obtain the energy spectrum by freezing out the carrier radial motion. The obtained spectrum exhibits different symmetries and for a fixed total angular momentum $m$, it has a hyperbolic dependence of the magnetic field. In particular, the energy spectra are not invariant under the transformation $B \longrightarrow -B$. The application of a potential, on …
We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more than two nominally highly symmetric QDs. For each, the effect of the interaction between QDs is studied by characterizing a large number of QDs through photoluminescence spectroscopy. A clear red-shift of the emission energy is observed together with a change in the orientation of its polarization, suggesting an increasing interaction between the QD…
In this comment we show that some equations and results of the paper titled "Dielectric screening and plasmons in AA-stacked bilayer graphene" are not correct. Furthermore, we present our results which seems to be more correct.
The quantum Goos-Hänchen shifts of the transmitted electron beam through an AA-stacked bilayer graphene superlattices is investigated. We found that the band structures of graphene superlattices can have more than one Dirac point, their locations do not depend on the number of barriers. It was revealed that any $n$-barrier structure is perfectly transparent at normal incidence around the Dirac points created in the superlattices. We showed that the Goos-Hänchen shifts display sharp peaks inside the transmission gap around two Dirac points ($E= V_B + τ$, $E= V_W + τ$), which are equal to those …
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
This work investigates the electronic properties of the energy spectrum of a hybrid system composed of (i) a circular quantum dot of monolayer graphene surrounded by an infinite sheet of AA-stacked bilayer graphene and (ii) a circular quantum dot of AA-stacked graphene bilayer surrounded by infinite monolayer graphene. We establish analytical findings for the related energy levels and wave functions using the continuum model and the zigzag boundary conditions at the graphene monolayer-bilayer interface. We investigate the effects of perpendicular magnetic, dot radius, and electrical fields on …
We discuss novel transverse plasmon-polaritons that are hosted by AA- and AB-stacked bilayer graphene due to perfect nesting. They are composed of oscillating counterflow currents in between the layers, giving a clear interpretation for these collective modes as magnetic excitations carrying magnetic moment parallel to the planes. For AA-stacked bilayer graphene, these modes can reach zero frequency at the neutrality point and we thus predict a symmetry broken ground-state leading to in-plane orbital ferromagnetism. Even though it could be hard to detect them in real solid-state devices, these…
We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band-gap engineering providing an alternative route to induce the formation of a band-gap.
The complete lattice-layer entanglement structure of Bernal stacked bilayer graphene is obtained for the quantum system described by a tight-binding Hamiltonian which includes mass and bias voltage terms. Through a suitable correspondence with the parity-spin $SU(2)\otimes SU(2)$ structure of a Dirac Hamiltonian, when it brings up tensor and pseudovector external field interactions, the lattice-layer degrees of freedom can be mapped into such a parity-spin two-qubit basis which supports the interpretation of the bilayer graphene eigenstates as entangled ones in a lattice-layer basis. The Dirac…
The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation (RPA). Whereas long lived plasmons in single layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene {\it even in the absence of doping}. Moreover, we show that the characteristic low energy dispersion relation is unaffected by changes in the number of carriers, unless the chemical potential of the doped sample exceeds the inter-layer hopping energy. W…
The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent experimental efforts [Y. Song et al., Nano Lett. 16, 6245 (2016)], we investigate the bound state properties of trilayer graphene (TLG) quantum dots (QDs) through numerical simulations. We show that the valley degeneracy can be lifted by breaking the time reversal symmetry through the application of a perpendicular magnetic field. The spectrum under such a p…
Tight-binding calculations predict that the AA-stacked graphene bilayer has one electron and one hole conducting bands, and that the Fermi surfaces of these bands coincide. We demonstrate that as a result of this degeneracy, the bilayer becomes unstable with respect to a set of spontaneous symmetry violations. Which of the symmetries is broken depends on the microscopic details of the system. We find that antiferromagnetism is the more stable order parameter. This order is stabilized by the strong on-site Coulomb repulsion. For an on-site repulsion energy typical for graphene systems, the anti…
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $ν=4, 8, 12$ consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas…
The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A atom of layer 1 and the B atom of layer 2 that have the same horizontal positions) t…
Excitons in vertically stacked type-II quantum dots experience the topological magnetic phase and demonstrate the Aharonov-Bohm oscillations in the emission intensity. Photoluminescence of vertically stacked ZnTe/ZnSe quantum dots is measured in magnetic fields up to 31 T. The Aharonov-Bohm oscillations are found in the magnetic-field dependence of emission intensity. The positions of the peaks of the emission intensity are in a good agreement with numerical simulations of excitons in stacked quantum dots.
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.
We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) $n$-$p$ junction and $n$-$p$-$n$ junction. We show that Klein tunneling of an electron can occur in this system. The quasiparticles are not only chiral but are additionally described by a `cone index'. Due to the orthogonality of states with different cone indexes, electron transport across a potential barrier must strictly conserve the cone index and this leads to the protected cone transport which is unique in AA-stacked BLG. Together with the negative refraction of electrons, electrons residing in diff…
Recent experiments indicate that AA-stacked bilayer graphenes (BLG) could exist. Since the energy bands of the AA-stacked BLG are different from both the monolayer and AB-stacked bilayer graphenes, different integer quantum Hall effect in the AA-stacked graphene is expected. We have thus calculated the quantized Hall conductivity $σ_{xy}$ and also longitudinal conductivity $σ_{xx}$ of the AA-stacked BLG within the linear response Kubo formalism. Interestingly, we find that the AA-stacked BLG could exhibit both conventional insulating behavior (the $\barν=0$ plateau) and chirality for $|\barμ|<…
We study magnetism of an adatom adsorbed on AA-stacked bilayer graphene (BLG) in both unbiased and biased cases, using the Anderson impurity model. We find different magnetic phase diagrams for the adatom, depending on the energy level of the adatom, which varies from the magnetic phase diagram of adatom in normal metals to that in graphene. This is due to the individual energy dependence of the density of states (DOS) of AA-stacked BLG and anomalous broadening of the adatom energy level. Furthermore we investigate the effect of a bias voltage on DOS of AA-stacked and show that the magnetizati…
We present a theoretical investigation of the optical properties of polaronic excitons in stacked self-assembled quantum dots, which is based on the non-adiabatic approach. A parallelepiped-shaped quantum dot is considered as a model for a self-assembled quantum dot in a stack. The exciton-phonon interaction is taken into account for all phonon modes specific for these quantum dots (bulk-like, half-space and interface phonons). We show that the coupling between stacked quantum dots can lead to a strong enhancement of the optical absorption in the spectral ranges characteristic for phonon satel…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may…
We calculate the dynamical conductivity of AA-stacked bilayer graphene as a function of frequency and in the presence of a finite chemical potential due to charging. Unlike the monolayer, we find a Drude absorption at charge neutrality in addition to an interband absorption with onset of twice the interlayer hopping energy. At finite doping, the interband absorption exhibits two edges which depend on both chemical potential and interlayer hopping energy. We study the behaviour as a function of varying chemical potential relative to the interlayer hopping energy scale and compute the partial op…
We study the charge carriers transport in an AA-stacked bilayer graphene modulated by a lateral one-dimensional multibarrier structure. We investigate the band structures of our system, that is made up of two shifted Dirac cones, for finite and zero gap. We use the boundary conditions to explicitly determine the transmission probability of each individual cone ($τ=\pm 1$) for single, double and finite periodic barrier structure. We find that the Klein tunneling is only possible when the band structure is gapless and can occur at normal incidence as a result of the Dirac nature of the quasipart…
Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian. The spin Hall conductivity in the linear response regime is determined within the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed, and it is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric field perpendi…
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduct…
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively little study on defect-free growth with Au-free mode and structure optimisation for achiving high performances. Here, we report a detailed study of the first self-catalyzed defect-free axially-stacked deep NWQDs. High structural quality is maintained when 50 GaAs QDs are placed in a single GaAsP NW. The QDs have very sharp interfaces (1.8~3.6 nm) and can be clo…
In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in …
We discuss and compare two different types of confinement in bilayer graphene by top and bottom gating with symmetrical microelectrodes. Trivial confinement corresponds to the same polarity of all top gates, which is opposed to that of all bottom ones. Topological confinement requires the polarity of part of the top-bottom pairs of gates to be reversed. We show that the main qualitative difference between trivial and topological bound states manifests itself in the magnetic field dependence. We illustrate our finding with an explicit calculation of the energy spectrum for quantum dots and ring…
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage …
We characterized stacked double-pyramidal quantum dots which showed biexciton binding energies close to zero by means of photoluminescence and cross-correlation measurements. It was possible to obtain a sequence of two photons with (nearly) the same energy from the biexciton-exciton-ground state cascade, as corroborated by a basic rate-equation model. This type of two-photon emission is both of relevance for fundamental quantum information theory studies as well as for more exotic applicative fields such as quantum biology.
We demonstrate that AA-stacked bilayer graphene (AA-BLG) encapsulated by dielectric materials can possess an energy gap due to the induced mass term. Using the four-band continuum model, we evaluate transmission and reflection probabilities along with the respective conductance. Considering interlayer mass-term difference opens a gap in the energy spectrum and also couples the two Dirac cones. This cone coupling induces an inter-cone transport that is asymmetric with respect to the normal incidence in the presence of asymmetric mass-term. The energy spectrum of the gapped AA-BLG exhibits elect…
Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum dots formed in gapped bilayer graphene (BLG), where the electron's valley states appear in pair with their spin quantum number and we analyse spin- and valley-singlet and triplet states for various BLG and dot parameters, as well as two-particle interaction strength and external magnetic field.
AA-stacked bilayer graphene supports Fermi circles in its bonding and antibonding bands which coincide exactly, leading to symmetry-breaking in the presence of electron-electron interactions. We analyze a continuum model of this system in the Hartree-Fock approximation, using a self-consistently screened interaction that accounts for the gap in the spectrum in the broken symmetry state. The order parameter in the groundstate is shown to be of the Ising type, involving transfer of charge between the layers in opposite directions for different sublattices. We analyze the Ising phase transition f…
The low-frequency optical excitations of AA-stacked bilayer graphene are investigated by the tight-binding model. Two groups of asymmetric LLs lead to two kinds of absorption peaks resulting from only intragroup excitations. Each absorption peak obeys a single selection rule similar to that of monolayer graphene. The excitation channel of each peak is changed as the field strength approaches a critical strength. This alteration of the excitation channel is strongly related to the setting of the Fermi level. The peculiar optical properties can be attributed to the characteristics of the LL wave…
We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.
The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significa…
Bilayer graphene is a nanomaterial that allows for well-defined, separated quantum states to be defined by electrostatic gating and, therefore, provides an attractive platform to construct tunable quantum dots. When a magnetic field perpendicular to the graphene layers is applied, the graphene valley degeneracy is lifted, and splitting of the energy levels of the dot is observed. Given the experimental ability to engineer this energy valley splitting, bilayer graphene quantum dots have a great potential for hosting robust qubits. Although bilayer graphene quantum dots have been recently realiz…
We study plasmon modes in doped AA-stacked bilayer graphene (BLG) within the nearest-neighbor tight-binding and the random phase approximation. We obtain closed analytical expressions for the polarizability function which are used to obtain the low-energy dispersion relations of and the numerical results for both acoustic and optical plasmon modes. Our result reveal the potential of AA-stacked BLG to be used as a tunable plasmonic device. In particular we find that the long-wavelength acoustic plasmon disperse as $ω_{+}\approx\sqrt{max(|μ|,t_{1})q}$ with a phase space which shrinks and vanishe…
The most important bands for the evaluation of strain in graphene (the 2D and 2D prime modes) are investigated. It is shown that for Bernal-stacked bilayers, the two-phonon Raman features have three different components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The individual components of the 2D and 2D prime modes are disentangled. The reported results enable addressing the properties of individual graphene layers in isotopically labelled turbostr…
Using a combination of quantum Monte Carlo simulations, functional renormalization group calculations and mean-field theory, we study the Hubbard model on the Bernal-stacked honeycomb bilayer at half-filling as a model system for bilayer graphene. The free bands consisting of two Fermi points with quadratic dispersions lead to a finite density of states at the Fermi level, which triggers an antiferromagnetic instability that spontaneously breaks sublattice and spin rotational symmetry once local Coulomb repulsions are introduced. Our results reveal an inhomogeneous participation of the spin mo…
Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homo-bilayer samples on their pola…
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy d…
The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article, we investigate the influence of a potential substrate on the transport properties of a biased AA-stacked n-p-n bilayer graphene junction (AA-BLG). Using the Dirac Hamiltonian with the transfer matrix approach we obtain the transmission probabilities and thus the respective conductance. In the presence of the induced mass-term, the energy spectrum and the int…
The static dielectric function in AA-stacked bilayer graphene (BLG), subjected to an electric field applied perpendicular to layers, is calculated analytically within the random phase approximation (RPA). This result is used to calculate the screened Coulomb interaction and the electrical conductivity. The screened Coulomb interaction, which here can be tuned by the perpendicular electric field, shows a power-law decay as $1/(γ^{2}+V^2)$ at long-distance limit where $V$ and $γ$ are the electrical potential and the inter-layer hopping energy respectively, indicating that the Coulomb interaction…
We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and reflection probabilities as well as the associated conductance. For two-band model and at normal incidence, we find extra resonances appearing in transmission compared to biased AB-BLG, which are Fabry-Pérot resonance type. Now by taking into account the inter-layer bias, we show that both of transmission and anti-Klein tunneling are diminished. Regarding four …
Water confined between two layers with separation of a few Angstrom forms layered two- dimensional ice structure. Using large scale molecular dynamics simulations with the adoptable ReaxFF interatomic potential we found that flat monolayer ice with a rhombic-square structure nucleates between graphene layers which is non-polar and non-ferroelectric. Two layers of water are found to crystallize into a square lattice close to the experimental found AA-stacking [G. Algara- Siller et al. Nature 519, 443445 (2015)]. Each layer has a net dipole moment which are in opposite direction. Bilayer ice is …
Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal bor…
Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic properties of all components of the vdW heterostructures are well preserved, which reflects the weakness of the vdW interaction. In the cases of bilayer SnS/graphene and bilayer SnS/bilayer graphene (AA-stacked), an Ohmic contact is formed which can be turned first into p-type and then into n-type Schottky c…
We present theoretical results based on mean-field and exact many-body approaches showing that in bilayer triangular graphene quantum dots with zigzag edges the magnetism can be controlled by an external vertical electric-field. We demonstrate that without electric field the spins of the two layers of the quantum dot interact ferromagnetically. At a critical value of the electric-field, the total spin of the bilayer structure can be turned off or reduced to a single localized spin, a qubit isolated from contacts and free from interaction with nuclear spins.
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we report on transport through a high-frequency gate controlled single-electron bilayer graphene quantum dot. By transient current spectroscopy of single-electron spin states, we extract a lower bound o…
In this work, we present a theoretical study of polaron states in a double quantum dot system. We present realistic calculations which combine 8 band \kp model, configuration interaction approach and collective modes method. We investigate the dependence of polaron energy branches on axial electric field. We show that coupling between carriers and longitudinal optical phonons via Fröhlich interaction leads to qualitative and quantitative reconstruction of the optical spectra. In particular, we study the structure of resonances between the states localized in different dots. We show that $p$-sh…
We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum states of the dot. Numerical results show the simultaneous presence of electron and hole confined states for certain doping profiles and a remarkable angular momentum dependence of the quantum dot spectrum which is in sharp contrast with that for conventional semiconductor quantum dots. We predict that the optical spectrum will consist of a series of non-equidis…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.
Electronic properties of triangular and hexagonal nano-scale quantum dots (QDs) of Silicene and bilayer graphene are studied. It is shown that the low-energy edge-localized electronic states, existing within the size-quantized gap are easily tunable by electric field. The appearance and field evolution of the electronic gap in these zero energy states (ZES) is shown to be very sensitive to QD geometry that permits to design the field-effect scalable QD devices with electronic properties on-demand.
