磁控溅射沉积磁电反铁磁Cr $_2$ O $_3$薄膜在Néel温度附近的临界行为
Critical behavior of sputter-deposited magnetoelectric antiferromagnetic Cr$_2$O$_3$ films near Néel temperature
摘要：
氧化铬（III）是一种经典的具有线性磁电效应的共线反铁磁体。我们提出的测量的磁电磁化率$α$的光刻沉积的500 nm的膜和散装单晶的Cr $_\mathrm{2}$ O $_\mathrm{3}$。我们研究了Néel温度附近的磁相变和亚晶格磁化强度的临界指数$β$。对于薄膜，在低于293 K时发现指数为0.49（1），在接近298 K的Néel温度时变为1.06（4）。对于单晶，指数恒定为0.324（4）。研究了磁电场冷却过程中反铁磁畴反转的几率。对于溅射薄膜，反转概率在298 K以上为零，并且仅在293 K以下稳定。我们将这种行为归因于薄膜生长过程中晶粒的形成，这使得晶粒间和晶粒内的交换耦合能不同。对于单晶，反转几率在307.6K的Néel温度下立即稳定。
英文摘要：
Chromium(III) oxide is a classical collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility $α$ of a sputter-deposited 500-nm film and a bulk single-crystal of Cr$_\mathrm{2}$O$_\mathrm{3}$. We investigated the magnetic phase-transition and the critical exponent $β$ of the sublattice magnetization near Néel temperature. For the films, an exponent of 0.49(1) was found below 293 K, and changed to 1.06(4) near the Néel temperature of 298 K. For the single-crystal, the exponent was constant at 0.324(4). We investigated the reversal probability of antiferromagnetic domains during magnetoelectric field cooling. For the sputtered films, reversal probability was zero above 298 K and stabilized only below 293 K. We attribute this behavior to formation of grains during film growth, which gives different intergrain and intragrain exchange-coupling energies. For the single-crystal, reversal probability was stabilized immediately at the Néel temperature of 307.6 K.
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