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arXiv 1602.06540cond-mat.mes-hall
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硅烯的弛豫时间和电荷电导率

Relaxation times and charge conductivity of silicene

Azadeh Mazloom, Fariborz Parhizgar, Saeed H. Abedinpour, Reza Asgari

摘要:

我们研究了中性和带电杂质存在下硅烯的输运和单粒子弛豫时间。在考虑自旋轨道相互作用的情况下,利用半经典玻尔兹曼方法研究了静电荷电导率。屏蔽是仿照内的M-Fermi和随机相位近似。我们发现输运弛豫时间总是比单粒子的长。在这种弯曲的二维结构中,载流子密度和带隙的容易电可控性使其成为几种电子和光电应用的合适候选者。特别是,我们观察到,直流电荷电导率可以很容易地通过外部电场,一个非常有前途的功能,作为电子开关和晶体管的应用程序控制。我们的研究结果将是定性有效的其他屈曲蜂窝晶格的同一家庭,如锗和锡。

英文摘要:

We investigate the transport and single particle relaxation times of silicene in the presence of neutral and charged impurities. The static charge conductivity is studied using the semiclassical Boltzmann formalism when the spin-orbit interaction is taken into account. The screening is modeled within Thomas-Fermi and random phase approximations. We show that the transport relaxation time is always longer than the single particle one. Easy electrical controllability of both carrier density and band gap in this buckled two-dimensional structure makes it a suitable candidate for several electronic and optoelectronic applications. In particular, we observe that the dc charge conductivity could be easily controlled through an external electric field, a very promising feature for applications as electrical switches and transistors. Our findings would be qualitatively valid for other buckled honeycomb lattices of the same family, such as germanine and stanine.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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