描述介质介电常数变化的一种新模型：（1）应用有限元技术研究矩形纳米通道中双电层的电势分布
A New Model For Incorporating the Variations of the Dielectric Permittivity of the Medium: Part (1)Potential Distribution of an Electrical Double Layer in Rectangular Nano channel by Applying Finite Element Method Technique
摘要：
在纳米通道中的电双层（EDL）中的电解质介质的介电常数的影响是在将模型应用于各种化学和生物医学检查之前需要校正的重要因素。然而，很少有人努力将其纳入迄今为止开发的EDL模型的数学中，尽管在过去的半个世纪甚至更长时间里，许多作者都意识到了这一点。大多数Nanoc通道在矩形截面中由芯片实验室制成，需要对其进行适当的浸渍。纳米通道中的EDL的作用在各种化学和生物医学检查中是重要的。大多数纳米通道在芯片上的截面都是矩形的。这种纳米通道中的EDL由二维GouyChapman（GC）方程控制。
英文摘要：
The effect of the dielectric permittivity of the electrolytic medium in the Electrical Double Layer (EDL) in Nanochannel is an important factor that requires a correction, before the application of the model in various chemical and biomedical examinations. However very few efforts are put forth to accommodate this into the mathematics of the EDL Models developed hitherto, even though it was realized by a host of authors for the past half a century or even more. Most of the Nanoc hannel made lab-on-chips in a rectangular cross section require suitable impregnation of this. The effect of the EDL in a nanochannel isimportant in various chemical and biomedical examinations. Most of the nanochannelmadelab on chips in a rectangular cross section. The EDL insuch a nanochannel is governed by two dimensional Gouy Chapman (GC)equation.
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